| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 43 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 300pF @25V(Vds) |
| Input Power (Max) | 43 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 43 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRFZ14PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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