| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 17.0 A |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 70.0 mΩ (max) |
| Power Dissipation | 3.8 W |
| Part Family | IRFZ24NS |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0V (min) |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 34.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
International Rectifier
11 Pages / 0.16 MByte
International Rectifier
10 Pages / 0.28 MByte
International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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