TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 17.0 A |
Case/Package | D2PAK-263 |
Power Dissipation | 3.8 W |
Part Family | IRFZ24NS |
Drain to Source Voltage (Vds) | 55.0 V |
Continuous Drain Current (Ids) | 17.0 A |
Rise Time | 34.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
International Rectifier
11 Pages / 0.16 MByte
International Rectifier
10 Pages / 0.15 MByte
International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
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Fairchild
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Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
NXP
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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