| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 17.0 A |
| Drain to Source Voltage (Vds) | 60.0 V |
| Continuous Drain Current (Ids) | 17.0 A |
Description
●Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
●applications.
●Advanced Process Technology
●Surface Mount (IRFZ24S)
●Low-profile through-hole (IRFZ24L)
●175°C Operating Temperature
●Fast Switching
International Rectifier
6 Pages / 0.16 MByte
International Rectifier
8 Pages / 0.99 MByte
International Rectifier
Transistor NPN MOS IRFZ24 INTERNATIONAL RECTIFIER TO220
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