| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 50 mΩ |
| Power Dissipation | 88W (Tc) |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Power Dissipation (Max) | 88W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
Vishay Siliconix
9 Pages / 1.59 MByte
Vishay Siliconix
9 Pages / 1.59 MByte
Vishay Siliconix
MOSFET N-CH 60V 30A TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 60V 30A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 60V...
Vishay Intertechnology
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Fairchild
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Motorola
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
