TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 83 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0175 Ω |
Polarity | N-CH |
Power Dissipation | 83 W |
Threshold Voltage | 4 V |
Input Capacitance | 1470 pF |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 49A |
Rise Time | 60 ns |
Input Capacitance (Ciss) | 1470pF @25V(Vds) |
Input Power (Max) | 94 W |
Fall Time | 45 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 94000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.4 mm |
Size-Height | 8.77 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Advanced process technology
Infineon
8 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
2 Pages / 0.03 MByte
Infineon
1 Pages / 0.19 MByte
Infineon
1 Pages / 0.14 MByte
VISHAY
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
International Rectifier
Ir# Irfz44 Mosfet n-Ch 60V 50A To-220ab
Fairchild
Trans MOSFET N-CH 60V 35A 3Pin(3+Tab) TO-220
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
NXP
49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET
Philips
N-channel enhancement mode TrenchMOS transistor
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.