TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 115 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0165 Ω |
Polarity | N-Channel |
Power Dissipation | 115 W |
Threshold Voltage | 4 V |
Input Capacitance | 1812pF @25V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 55A |
Rise Time | 97 ns |
Input Capacitance (Ciss) | 1812pF @25V(Vds) |
Input Power (Max) | 115 W |
Fall Time | 57 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 115W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.4 mm |
Size-Height | 8.77 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFZ44VPBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
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