TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 92 W |
Drain to Source Resistance (on) (Rds) | 0.012 Ω |
Polarity | N-Channel |
Power Dissipation | 92 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 57A |
Rise Time | 62 ns |
Input Capacitance (Ciss) | 1690pF @25V(Vds) |
Fall Time | 38 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 92W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
Infineon
12 Pages / 0.36 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
9 Pages / 0.14 MByte
VISHAY
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
International Rectifier
Ir# Irfz44 Mosfet n-Ch 60V 50A To-220ab
Fairchild
Trans MOSFET N-CH 60V 35A 3Pin(3+Tab) TO-220
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
Philips
N-channel enhancement mode TrenchMOS transistor
NXP
49A, 55V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.