| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 53.0 A |
| Case/Package | TO-262-3 |
| Number of Channels | 1 Channel |
| Polarity | N-Channel |
| Power Dissipation | 120 W |
| Part Family | IRFZ46NL |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 53.0 A |
| Rise Time | 76.0 ns |
| Input Capacitance (Ciss) | 1696pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 6.22 mm |
Description
●Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRFZ46NS)
● Low-profile through-hole (IRFZ46NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
International Rectifier
11 Pages / 0.25 MByte
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
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