| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 53.0 A |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 3.8 W |
| Part Family | IRFZ46NS |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 53.0 A |
| Rise Time | 76.0 ns |
| Input Capacitance (Ciss) | 1696pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
International Rectifier
11 Pages / 0.66 MByte
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
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