| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Polarity | N-CH |
| Power Dissipation | 82W (Tc) |
| Input Capacitance | 1460 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 51A |
| Rise Time | 63 ns |
| Input Capacitance (Ciss) | 1460pF @25V(Vds) |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 82W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
Infineon
12 Pages / 0.36 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
IRF
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
