TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Drain to Source Resistance (on) (Rds) | 18 mΩ |
Polarity | N-Channel |
Power Dissipation | 190 W |
Drain to Source Voltage (Vds) | 60.0 V |
Continuous Drain Current (Ids) | 50.0 A |
Rise Time | 250 ns |
Input Capacitance (Ciss) | 2400pF @25V(Vds) |
Fall Time | 250 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 190W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Material | Silicon |
Minimum Packing Quantity | 2000 |
VISHAY
11 Pages / 0.28 MByte
VISHAY
12 Pages / 0.29 MByte
VISHAY
TO-220-3 N-CH 60V 50A 18mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Philips
N-channel enhancement mode TrenchMOS transistor
NXP
TRANSISTOR 64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Vishay Siliconix
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
TI
50A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.