| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 72.0 A |
| Case/Package | D2PAK-263 |
| Drain to Source Resistance (on) (Rds) | 12 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Part Family | IRFZ48VS |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 72.0 A |
| Rise Time | 200 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 175℃ |
International Rectifier
9 Pages / 0.3 MByte
International Rectifier
10 Pages / 0.17 MByte
VISHAY
TO-220-3 N-CH 60V 50A 18mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Philips
N-channel enhancement mode TrenchMOS transistor
NXP
TRANSISTOR 64 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Vishay Siliconix
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
TI
50A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
