| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 38 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 38 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 38 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4BC10UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating up to 80kHz in hard switching, >200kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
● High efficiency
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