TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 14.0 A |
Case/Package | TO-263-3 |
Power Dissipation | 49 W |
Part Family | IRG4BC15UD-S |
Rise Time | 20.0 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Input Power (Max) | 49 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Height | 9.65 mm |
Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT up to 20A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
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