| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 160 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Rise Time | 23.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 160 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4BC40W-SPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).
● Industry-benchmark switching losses improve efficiency of all power supply topologies
● 50% Reduction of Eoff parameter
● Low IGBT conduction losses
● Particular benefit to single-ended converters and boost PFC topologies 150W and higher
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