| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 60 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 51 ns |
| Input Power (Max) | 60 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 11A 60W Through Hole TO-247AC
Infineon
11 Pages / 0.19 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.08 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5A)
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
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