TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 11.0 A |
Case/Package | TO-247-3 |
Rise Time | 30.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 51 ns |
Input Power (Max) | 60 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
International Rectifier
11 Pages / 0.21 MByte
International Rectifier
10 Pages / 0.18 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5A)
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 11A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 11A 3Pin (3+Tab) TO-247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
International Rectifier
IGBT 1200V 11A 60W TO247AC
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