TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-274 |
Power Rating | 350 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 110 ns |
Input Power (Max) | 350 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 99A 350W Through Hole SUPER-247™ (TO-274AA)
Infineon
10 Pages / 0.31 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
11 Pages / 0.25 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 78A 350000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 99A 3Pin(3+Tab) TO-274AA
International Rectifier
Trans IGBT Chip N-CH 1.2kV 78A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 99A 350000mW 3Pin(3+Tab) TO-274AA
International Rectifier
Trans IGBT Chip N-CH 1.2kV 78A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 78A 350000mW 3Pin(3+Tab) TO-274AA
International Rectifier
1200V UltraFast 4-20kHz Discrete IGBT in a TO-274AA package
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