| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 38 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 38 W |
| Rise Time | 31.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 38 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG4RC10SDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Minimizes power dissipation at up to 3kHz PWM frequency in inverter drives, up to 4kHz in brushless DC drives. The HEXFRED™ diodes optimized for performance with IGBT. Minimized recovery characteristics require less/no snubbing.
● Tight parameter distribution
● High efficiency
● Optimized for specific application conditions
● Lower losses than MOSFET"s conduction and diode losses
● 1.1V at 2A Typical extremely low voltage drop
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IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5A)
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