| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 14 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 38 W |
| Part Family | IRG4RC10SD |
| Rise Time | 31 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 38 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.73 mm |
| Size-Height | 1.24 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT up to 20A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
11 Pages / 0.34 MByte
International Rectifier
1 Pages / 0.42 MByte
International Rectifier
2 Pages / 0.08 MByte
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5A)
Infineon
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK Tube
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Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK Tube
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Trans IGBT Chip N-CH 600V 9A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 14A 38000mW 3Pin(2+Tab) DPAK Tube
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 14A 3Pin(2+Tab) DPAK T/R
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