| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 600 V |
| Current Rating | 22.0 A |
| Case/Package | TO-252-3 |
| Power Rating | 66 W |
| Rise Time | 24.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 66 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 22A 66W Surface Mount D-Pak
Infineon
9 Pages / 0.26 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
8 Pages / 0.25 MByte
Infineon
Trans IGBT Chip N-CH 600V 22A 66000mW 3Pin(2+Tab) DPAK Tube
Infineon
Trans IGBT Chip N-CH 600V 22A 66000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 22A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 22A 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 22A 66000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 22A 66000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 22A 3Pin(2+Tab) DPAK T/R
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