TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 179 W |
Power Dissipation | 179 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 179 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 179000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT Trench 1200V 50A 179W Through Hole TO-247AD
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.28 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
IGBT Single Transistor, 50A, 1.9V, 179W, 1.2kV, TO-247AC, 3Pins
Infineon
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247AD Tube
Infineon
Trans IGBT Chip N-CH 1200V 50A 179000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) TO-247AD Tube
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