| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 313 W |
| Number of Positions | 3 Position |
| Power Dissipation | 313 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 313 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRG7PH42UD1PBF is an Insulated Gate Bipolar Transistor with ultra-low VF diode for induction heating and soft switching applications. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● Ultra-low VF diode
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Tight parameter distribution
● Low EMI
● 1300Vpk Repetitive transient capacity
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