| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-274-3 |
| Power Rating | 1.15 kW |
| Number of Positions | 3 Position |
| Power Dissipation | 1.15 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 1150 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.15 kW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.1 mm |
| Size-Width | 5.5 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRG7PSH73K10PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Tight parameter distribution
● High efficiency in a wide range of applications
● 10µs Short-circuit SOA
Infineon
9 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.12 MByte
Infineon
IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
International Rectifier
INTERNATIONAL RECTIFIER IRG7PSH73K10PBF IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
