TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-274-3 |
Power Rating | 1.15 kW |
Number of Positions | 3 Position |
Power Dissipation | 1.15 kW |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Power (Max) | 1150 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.15 kW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.1 mm |
Size-Width | 5.5 mm |
Size-Height | 20.8 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRG7PSH73K10PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Tight parameter distribution
● High efficiency in a wide range of applications
● 10µs Short-circuit SOA
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IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
International Rectifier
INTERNATIONAL RECTIFIER IRG7PSH73K10PBF IGBT Single Transistor, 220A, 2V, 1.15kW, 1.2kV, TO-274AA, 3Pins
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