| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 104 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 156 W |
| Rise Time | 20.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 0.8℃/W (RθJC) |
| Reverse recovery time | 90 ns |
| Input Power (Max) | 156 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 156000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRGB10B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
● Low diode VF
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Excellent current sharing in parallel operation
● 10µs Short-circuit capability
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IGBT Single Transistor, 22A, 2.2V, 104W, 600V, TO-220AB, 3Pins
International Rectifier
Trans IGBT Chip N-CH 600V 22A 3Pin(3+Tab) TO-220AB
International Rectifier
IGBT 600V 22A 156W TO220AB
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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