| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 370 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Rise Time | 28.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 370 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRGB30B60KPBF is an Insulated Gate Bipolar Transistor features low VCE (on) non-punch through IGBT technology and rugged transient performance.
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Low EMI
● Excellent current sharing in parallel operation
● 10µs Short-circuit capability
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