| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 77 W |
| Part Family | IRGB4045D |
| Rise Time | 11 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 74 ns |
| Input Power (Max) | 77 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.41 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●Co-Pack IGBT up to 20A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
10 Pages / 0.37 MByte
International Rectifier
11 Pages / 0.37 MByte
International Rectifier
IGBT 600V 12A 77W TO220AB
Infineon
Trans IGBT Chip N-CH 600V 12A 77000mW 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans IGBT Chip N-CH 600V 12A 77000mW 3Pin(3+Tab) TO-220AB Tube
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