IRGBC40 Datasheet PDF - International Rectifier

Description

●Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.

●Features

●• Short circuit rated - 10µs @ 125°C, VGE= 15V

●• Switching-loss rating includes all "tail" losses

●•  Optimized for high operating frequency (over 5kHz)

●    See Fig. 1 for Current vs. Frequency curve