Description
●Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.
●Features
●• Short circuit rated - 10µs @ 125°C, VGE= 15V
●• Switching-loss rating includes all "tail" losses
●• Optimized for medium operating frequency (1 to 10kHz)
International Rectifier
2 Pages / 0.05 MByte
International Rectifier
Short Circuit Rated UltraFast IGBT
Infineon
IGBT UFAST 600V 40A TO-220AB
Infineon
IGBT STD 600V 50A TO-220AB
International Rectifier
50A, 600V, n-Channel Igbt, To-220ab
International Rectifier
40A, 600V, n-Channel Igbt, To-220ab
International Rectifier
600V Discrete IGBT in a TO-220AB package
International Rectifier
600V Discrete IGBT in a TO-220AB package
International Rectifier
Short Circuit Rated Fast IGBT
International Rectifier
600V Discrete IGBT in a TO-220AB package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.