| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 52 W |
| Part Family | IRGIB15B60KD1 |
| Rise Time | 35.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 67 ns |
| Input Power (Max) | 52 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.83 mm |
●Single IGBT up to 20A, Infineon
●optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs
International Rectifier
13 Pages / 0.37 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.07 MByte
International Rectifier
IGBT 600V 19A 52W TO220FP
Infineon
Trans IGBT Chip N-CH 600V 19A 52000mW 3Pin(3+Tab) TO-220 Full-Pack Tube
International Rectifier
Trans IGBT Chip N-CH 600V 19A 3Pin(3+Tab) TO-220 Full-Pack
Infineon
Trans IGBT Chip N-CH 600V 19A 3Pin(3+Tab) TO-220 Full-Pack
Infineon
Trans IGBT Chip N-CH 600V 19A 52000mW 3Pin(3+Tab) TO-220 Full-Pack
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