| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 330 W |
| Number of Positions | 3 Position |
| Power Dissipation | 330 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 330 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRGP4063PBF is an Insulated Gate Bipolar Transistor suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
● Low VCE (ON) Trench IGBT technology
● Low switching losses
● Square RBSOA
● 100% of Parts tested for ILM
● Positive VCE (ON) temperature coefficient
● Tight parameter distribution
● High efficiency in a wide range of applications
● Low EMI
● 5µs Short-circuit SOA
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