| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 268 W |
| Number of Positions | 3 Position |
| Power Dissipation | 268 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 120 ns |
| Input Power (Max) | 268 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 268000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IRGP4069D Series 600 V 76 A Insulated Gate Bipolar Transistor - TO-247AD
Infineon
3 Pages / 0.36 MByte
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73 Pages / 2.93 MByte
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2 Pages / 0.17 MByte
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Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AD Tube
Infineon
Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 76A 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 76A 268000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 600V 76A 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 600V 76A 3Pin(3+Tab) TO-247AD Tube
Infineon
600V Low VCEon Trench Co-Pack IGBT with Ultra-Fast Soft Recovery Diode in a TO-247 package
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