TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 325000 mW |
Breakdown Voltage (Collector to Emitter) | 650 V |
Reverse recovery time | 170 ns |
Input Power (Max) | 325 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 325000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT 650V 90A 325W Through Hole TO-247AD
Infineon
12 Pages / 0.91 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
Trans IGBT Chip N-CH 650V 90A 300000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 650V 90A 325000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 650V 90A 300000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 650V 90A 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 650V 90A 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 650V 90A 3Pin(3+Tab) TO-247AD Tube
Infineon
Trans IGBT Chip N-CH 650V 90A 325000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
Trans IGBT Chip N-CH 650V 90A 3Pin(3+Tab) TO-247AD Tube
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