| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 273 W |
| Number of Positions | 3 Position |
| Power Dissipation | 273 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 150 ns |
| Input Power (Max) | 273 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 273 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Benefits:
● Low VCE(ON) and switching losses
● 5.5µs short circuit SOA
● Square RBSOA
● Maximum junction temperature 175°C
● Positive VCE(ON) temperature coefficient
● Lead-free, RoHS compliant
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12 Pages / 0.65 MByte
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270 Pages / 11.59 MByte
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73 Pages / 2.93 MByte
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INFINEON IRGP4750DPBF IGBT Single Transistor, N-CH, 70A, 1.7V, 273W, 650V, TO-247AC, 3Pins
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Trans IGBT Chip N-CH 650V 70A 3Pin(3+Tab) TO-247AC Tube
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Trans IGBT Chip N-CH 650V 70A 273000mW 3Pin(3+Tab) TO-247AD Tube
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