TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 80.0 A |
Case/Package | Super-247-3 |
Power Dissipation | 595000 mW |
Part Family | IRGPS40B120UD |
Rise Time | 39.0 ns |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 180 ns |
Input Power (Max) | 595 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 595000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Height | 20.3 mm |
●Co-Pack IGBT over 21A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
12 Pages / 0.12 MByte
International Rectifier
12 Pages / 0.13 MByte
Infineon
Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
Infineon
Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
INTERNATIONAL RECTIFIER IRGPS40B120UPBF IGBT Single Transistor, 80A, 3.5V, 595W, 1.2kV, TO-274AA, 3Pins
International Rectifier
Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) TO-274AA
Infineon
Trans IGBT Chip N-CH 1200V 80A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
1200V UltraFast 8-25kHz Single IGBT in a TO-274AA package
IRF
INSULATED GATE BIPOLAR TRANSISTOR
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.