| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 52 W |
| Power Dissipation | 52 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 77 ns |
| Input Power (Max) | 52 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 52000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 7.8A 52W Surface Mount D-Pak
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14 Pages / 0.3 MByte
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270 Pages / 11.59 MByte
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73 Pages / 2.93 MByte
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2 Pages / 0.17 MByte
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Trans IGBT Chip N-CH 600V 7.8A 3Pin (2+Tab) DPAK
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600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK Tube
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Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 7.8A 52000mW 3Pin(2+Tab) DPAK T/R
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