| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 77 W |
| Polarity | N-Channel |
| Power Dissipation | 77000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 74 ns |
| Input Power (Max) | 77 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 77 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Trench 600V 12A 77W Surface Mount D-Pak
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INFINEON IRGR4045DTRPBF IGBT Single Transistor, N-CH, 12A, 1.7V, 77W, 600V, TO-252AA, 3Pins
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Trans IGBT Chip N-CH 600V 12A 77000mW 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 12A 3Pin(2+Tab) DPAK Tube
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Infineon
Trans IGBT Chip N-CH 600V 12A 77000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 12A 77000mW 3Pin(2+Tab) DPAK T/R
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