| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 90 W |
| Power Dissipation | 90 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 70 ns |
| Input Power (Max) | 90 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 13A 90W Surface Mount D2PAK
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INFINEON IRGS6B60KPBF IGBT Single Transistor, 13A, 1.8V, 90W, 600V, TO-263, 3Pins
International Rectifier
Trans IGBT Chip N-CH 600V 13A 3Pin(2+Tab) D2PAK T/R
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Trans IGBT Chip N-CH 600V 13A 90000mW 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 18A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 13A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans IGBT Chip N-CH 600V 13A 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 600V 13A 90000mW 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 13A 3Pin(2+Tab) D2PAK T/R
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