| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 160A |
| Rise Time | 270 ns |
| Input Capacitance (Ciss) | 6590pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL1404PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
8 Pages / 0.2 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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1 Pages / 0.14 MByte
International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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Trans MOSFET N-CH 40V 160A 3Pin(3+Tab) TO-220AB Tube
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