| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 104 A |
| Case/Package | TO-262 |
| Drain to Source Voltage (Vds) | 55.0 V |
| Continuous Drain Current (Ids) | 104 A |
| Rise Time | 160 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
●applications.
●Advanced Process Technology
●Surface Mount (IRL2505S)
●Low-profile through-hole (IRL2505L)
●175°C Operating Temperature
●Fast Switching
●Fully Avalanche Rated
●Logic-Level Gate Drive
International Rectifier
10 Pages / 0.17 MByte
International Rectifier
10 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 55V 104A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 104A; TO-220AB; PD 200W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 104A; D2Pak; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 55V 104A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET N-CH 55V 104A TO-262
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