| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Power Rating | 110 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 16 mΩ |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 64A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 1650pF @25V(Vds) |
| Input Power (Max) | 94 W |
| Fall Time | 9.1 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 94W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.2 mm |
| Size-Width | 4.5 mm |
| Size-Height | 9.45 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-262
Infineon
11 Pages / 0.63 MByte
Infineon
14 Pages / 0.27 MByte
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF
Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)
International Rectifier
Trans MOSFET N-CH 30V 64A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET 30V 1 N-CH HEXFET 12mOhms 22NC
International Rectifier
Trans MOSFET N-CH 30V 64A 3Pin(3+Tab) TO-262
International Rectifier
Trans MOSFET N-CH 30V 64A 3Pin(2+Tab) D2PAK
International Rectifier
MOSFET N-CH 30V 64A D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
