| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 150 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 140A |
| Rise Time | 230 ns |
| Input Capacitance (Ciss) | 5000pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL3803PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Logic level gate drive
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
4 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 30V 140A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.006Ω, Id=140A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 30V 140A 3Pin(2+Tab) D2PAK Tube
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