| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0055 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 1 V |
| Input Capacitance | 3720pF @25V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 140A |
| Input Capacitance (Ciss) | 3720pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL3803VPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
9 Pages / 0.2 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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1 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 30V 140A TO-220AB
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.006Ω, Id=140A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.006Ω; ID 140A; TO-220AB; PD 200W; VGS +/-16V
International Rectifier
Trans MOSFET N-CH 30V 140A 3Pin(2+Tab) D2PAK Tube
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