| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Rise Time | 47 ns |
| Fall Time | 18 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Width | 4.7 mm |
| Operating Temperature | -55℃ ~ 175℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Logic-Level Gate Drive
●• RDS(on)Specified at VGS= 4 V and 5 V
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Lead (Pb)-free Available
Vishay Semiconductor
10 Pages / 1.12 MByte
Vishay Semiconductor
9 Pages / 1.12 MByte
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