TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 5.60 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 440 mΩ |
Polarity | N-Channel |
Power Dissipation | 37W (Tc) |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 5.60 A |
Input Capacitance (Ciss) | 235pF @25V(Vds) |
Power Dissipation (Max) | 37W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Advanced Power MOSFET
●FEATURES
●♦Logic-Level Gate Drive
●♦Avalanche Rugged Technology
●♦Rugged Gate Oxide Technology
●♦Lower Input Capacitance
●♦Improved Gate Charge
●♦Extended Safe Operating Area
●♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V
●♦Lower RDS(ON): 0.336Ω(Typ.)
Fairchild
8 Pages / 0.23 MByte
Fairchild
8 Pages / 0.23 MByte
Fairchild
1 Pages / 0.09 MByte
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Samsung
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TI
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.