| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 9.20 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100V (min) |
| Continuous Drain Current (Ids) | 9.20 A |
| Rise Time | 64.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 15.49 mm |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost the TO-220 contribute to its wide acceptance throughout the industry.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Logic-Level Gate Drive
●• RDS(on) Specified at VGS = 4 V and 5 V
●• 175 °C Operating Temperature
●• Fast Switching
●• Ease of Paralleling
●• Lead (Pb)-free Availble
Vishay Semiconductor
8 Pages / 0.98 MByte
Vishay Semiconductor
9 Pages / 1.12 MByte
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