TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 220 mΩ |
Polarity | N-Channel |
Power Dissipation | 49 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 9.20 A |
Rise Time | 10 ns |
Fall Time | 9 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.3 mm |
Advanced Power MOSFET
●FEATURES
●♦Logic-Level Gate Drive
●♦Avalanche Rugged Technology
●♦Rugged Gate Oxide Technology
●♦Lower Input Capacitance
●♦Improved Gate Charge
●♦Extended Safe Operating Area
●♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V
●♦Lower RDS(ON): 0.336Ω(Typ.)
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