| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 120 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 62 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 755pF @25V(Vds) |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 62W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Advanced Power MOSFET
●FEATURES
●♦Logic-Level Gate Drive
●♦Avalanche Rugged Technology
●♦Rugged Gate Oxide Technology
●♦Lower Input Capacitance
●♦Improved Gate Charge
●♦Extended Safe Operating Area
●♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V
●♦Lower RDS(ON): 0.336Ω(Typ.)
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