| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Power Dissipation | 88 W |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 930pF @25V(Vds) |
| Input Power (Max) | 88 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 88W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 100V 15A (Tc) 88W (Tc) Through Hole TO-220AB
Vishay Siliconix
8 Pages / 0.36 MByte
Vishay Siliconix
9 Pages / 1.11 MByte
Vishay Siliconix
1 Pages / 0.13 MByte
Vishay Siliconix
MOSFET N-CH 100V 15A TO-220AB
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packaget
Vishay Semiconductor
Trans MOSFET N-CH 100V 15A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
15A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
